The mechanism of Ohmic contacts formation to p-type SiC is a fundamental and technological concern continuously under debate. Typically, Ti/Al-based contacts are a good choice for Ohmic contacts to p-type SiC, even though some aspects strictly related to the specific nature of Al (susceptibility to oxidation, low melting temperature, etc.) remain to be optimized. In this work, the evolution of the electrical properties of a Ti/Al/W multiple-layer contact has been studied by TLM characterization and correlated to the changes in the morphology and microstructure upon thermal annealing. The formation of an Ohmic contact has been observed after a thermal annealing at 1100 C, discussing the possible reasons determining the transition to an Ohmic behavior.