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Type: 
Conference
Description: 
4H-SiC defects evolution after thermal processes has been evaluated. Different annealing temperatures have been used to decrease the defect density of epitaxial layer (as stacking faults) and recover the damage occurred after ion implantation. The propagation of defects has been detected by Photoluminescence tool and monitored during the thermal processes. The results show that implants do not affect the surface roughness and how a preliminary annealing process, before ion implantation step, can be useful in order to ...
Publisher: 
IEEE
Publication date: 
25 Sep 2016
Authors: 

N Piluso, MA Di Stefano, S Lorenti, F La Via

Biblio References: 
Pages: 1-1
Origin: 
Silicon Carbide & Related Materials (ECSCRM), European Conference on