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Type: 
Conference
Description: 
A new technique with micro-Raman and micro-PL analysis is proposed to detect defects in 3C-SiC epitaxial films. The high-power of an above band-gap laser is used to increase locally the free carriers density in un-doped epitaxial material (n< 10 16 cm− 3). The electronic plasma couples with the longitudinal optical (LO) Raman mode determining the so-called LOPC effect. The Raman shift of the LO phonon-plasmon-coupled mode (LOPC) changes as the free carriers density is modified. Crystallographic defects induce a ...
Publisher: 
IEEE
Publication date: 
25 Sep 2016
Authors: 

Grazia Litrico, Nicolò Piluso, Francesco La Via

Biblio References: 
Pages: 1-1
Origin: 
Silicon Carbide & Related Materials (ECSCRM), European Conference on