Type:
Conference
Description:
A new technique with micro-Raman and micro-PL analysis is proposed to detect defects in 3C-SiC epitaxial films. The high-power of an above band-gap laser is used to increase locally the free carriers density in un-doped epitaxial material (n< 10 16 cm− 3). The electronic plasma couples with the longitudinal optical (LO) Raman mode determining the so-called LOPC effect. The Raman shift of the LO phonon-plasmon-coupled mode (LOPC) changes as the free carriers density is modified. Crystallographic defects induce a ...
Publisher:
IEEE
Publication date:
25 Sep 2016
Biblio References:
Pages: 1-1
Origin:
Silicon Carbide & Related Materials (ECSCRM), European Conference on