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Type: 
Journal
Description: 
In this paper we discuss a multi-scale method for the process simulation at the atomic resolution applied to the plasma etching. We demonstrate that accurate prediction of the micro-structure modifications, as a function of the equipment parameters, can be achieved by coupling two simulation approaches modeling phenomena at different length scales. Focusing on the etching processing of nano-patterned silicon samples in in HBr/O $ _ {2} $-type plasma the main the ingredients of the numerical method are highlighted: a) ...
Publisher: 
IEEE
Publication date: 
23 Jun 2017
Authors: 

Alessio Campo, Salvatore Francesco Lombardo, Ioannis Deretzis, Giuseppe Garozzo, Giuseppe Gioacchino Neil Angilella, Antonino La Magna

Biblio References: 
Origin: 
IEEE Transactions on Nanotechnology