The chalcogenide material are extensively studied, optically and electrically, for the promising characteristic of scaling possibility, beyond silicon technology, as a viable alternative material for non-volatile memories application and it actually define a particular class namely Phase Change Memory. The working principle of these new devices resides in the substantial change of the electrical resistance between the amorphous and the crystalline phases induced by short electric pulses. The two phases are characterized ...
1 Jan 2017
20TH INTERNATIONAL CONFERENCE ON SURFACE MODIFICATION OF MATERIALS BY ION BEAMS