First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the $(4, 4) $ and $(3, 5) $ Stacking Faults | Catania HQ

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First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the $(4, 4) $ and $(3, 5) $ Stacking Faults

Type:

Journal

Description:

CiNii 国立情報学研究所学術情報ナビゲータ[サイニィ]. メニュー検索 …

Publisher:

Publication date:

1 Jan 2010

Authors:

Massimo Camarda, Antonino La Magna, Pietro Delugas, Francesco LA VIA

Biblio References:

Volume: 64 Pages: 283

Origin:

Mater. Sci. Forum

Link:

https://ci.nii.ac.jp/naid/10027783624/