We have developed a transfer process of 3C-SiC-on-Si (1 0 0) seeding layers grown by chemical vapor deposition onto a poly-or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [1 0 0] direction resulting in large area crystals (up to≈ 11 cm 2) with a thickness of up to approximately 850 μ m. Raman spectroscopy, Laue X-ray diffraction and electron-backscattering-diffraction revealed a high material quality in terms of single-crystallinity without secondary polytype inclusions, antiphase boundaries or double positioning grain boundaries. Defects in the bulk grown 3C-SiC, like protrusions with surrounding stressed areas, stem from the epitaxial seeding layer. The presented concept using 3C-SiC-on-Si seeding layers reveals a path for the growth of bulk 3C-SiC crystals.