High-k polycrystalline Pr (2) O (3) thin films have been deposited by metal organic chemical vapor deposition (MOCVD) technique on Si (001) and 4H-SiC (0001) substrates. MOCVD processes have been carried out from the Pr (tmhd)(3)(H-tmhd= 2, 2, 6, 6-tetramethyl-3, 5-heptandione) precursor. Complete structural and morphological characterization of films has been carried out using several techniques (X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)). Polycrystalline Pr (2) O (3) ...
1 Jan 2006
Volume: 9 Issue: 6 Pages: 1073-1078
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING