Type:
Journal
Description:
In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed
Publisher:
Publication date:
1 Jan 2005
Biblio References:
Volume: 87 Pages: 1-3
Origin:
APPLIED PHYSICS LETTERS