Type:
Conference
Description:
We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm 2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.
Publisher:
Trans Tech Publications Ltd
Publication date:
1 Jan 2017
Biblio References:
Volume: 897 Pages: 15-18
Origin:
Materials Science Forum