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Type: 
Conference
Description: 
We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm 2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2017
Authors: 

Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J Wellmann

Biblio References: 
Volume: 897 Pages: 15-18
Origin: 
Materials Science Forum