An O2 remote plasma metal organic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological, and optical properties of Er2O3 thin films grown on Si(100) using the tris(isopropylcyclopentadienyl)erbium precursor. The RP-MOCVD approach produced highly (100)-oriented, dense, and mechanically stable Er2O3 films with columnar structure.
American Institute of Physics
6 Aug 2007
Volume: 91 Issue: 6 Pages: 061923
Applied Physics Letters