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Type: 
Journal
Description: 
Full performance of GaN power devices is not attained yet due to their self-heating. Towards solving this issue Silicon Carbide is a common substrate for growth of GaN and AlGaN epitaxial layers. In spite of the superior thermal conductivity of SiC compared to eg Sapphire or Silicon, thermal management of GaN based devices is still a challenge.
Publisher: 
The Electrochemical Society
Publication date: 
23 Jul 2018
Authors: 

Rositsa Yakimova, Andras Kovacs, Anelia Kakanakova, Filippo Giannazzo, Bela Pecz

Biblio References: 
Issue: 38 Pages: 1281-1281
Origin: 
Meeting Abstracts