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Type: 
Journal
Description: 
The effects of thermal and intrinsic stress produced on SOI substrates by the field oxidation have been studied. Results of electrical and structural characterization obtained on SOI have been compared with standard bulk Si and a different structure has been adopted in order to reduce the induced stress.
Publisher: 
Pergamon
Publication date: 
1 Apr 2007
Authors: 

Stefania Privitera, R Modica, V Cerantonio, G Fallica, G Pappalardo

Biblio References: 
Volume: 47 Issue: 4-5 Pages: 802-805
Origin: 
Microelectronics Reliability