Interfacial phase change memory devices based on a distinct nanoscale structure called superlattice have been shown to outperform conventional phase-change devices. This improvement has been attributed to the hetero-interfaces, which play an important role for the superior device characteristics. However, the impact of grain boundaries (GBs), usually present in large amounts in a standard sputter-deposited superlattice film, on the device performance has not yet been investigated.
21 Mar 2019
Volume: 31 Issue: 20 Pages: 204002
Journal of Physics: Condensed Matter