Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength of 308 nm to study interaction and reaction of the involved atomic species. With this intent, the deposited nickel layer thickness was scaled from 100 nm to 10 nm and the laser fluence was spanned from 2.2 to 4.2 J/cm2. A combination of structural characterization by X-ray diffraction, Energy-Dispersive X-ray spectroscopy, Raman Spectroscopy, Transmission Electron Microscopy and morphological investigations through Scanning Electron Microscopy with theoretical predictions as a function of the applied laser fluence, have unveiled that the starting nickel thickness plays a main role, especially above the threshold for nickel melting (2.8 J/cm2). As a general paradigm, sufficient silicon release from the substrate occurs above this threshold that is available for silicidation, with amount increasing with the laser fluence. This …