Albeit its structural and chemical stability, graphene is often subjected to n‐or p‐type doping when interacting with substrates, gate oxides or environmental molecules. Such interaction shifts the Fermi level of the system away from the Dirac point and alters the intrinsic electronic and transport characteristics of the graphene sheet. We use the density functional theory to show that the Fermi level of a graphene/AlN or graphene/Al 2 O 3 heterostructure can be extensively tuned through the polarity and surface reconstruction of either the nitride or the oxide layer. Hence, Fermi level engineering through the manipulation of confining materials can become a viable route for enhancing the selectivity and optimizing the properties of graphene‐based devices.
John Wiley & Sons, Ltd
9 Oct 2019
physica status solidi (RRL)–Rapid Research Letters