Layered semiconductors of the IIIA–VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness‐dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D indium selenide (InSe) has emerged as a promising candidate for the realization of thin‐film field effect transistors and phototransistors due to its high intrinsic mobility (>102 cm2 V−1 s−1) and the direct optical transitions in an energy range suitable for visible and near‐infrared light detection. A key requirement for the exploitation of large‐scale (opto)electronic applications relies on the development of low‐cost and industrially relevant 2D material production processes, such as liquid phase exfoliation, combined with the availability of high‐throughput device fabrication methods. Here, a β polymorph of indium selenide (β‐InSe …