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Type: 
Journal
Description: 
In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si substrate, Si melts, and the remaining freestanding SiC layer was used as a seed layer for the homo-epitaxial growth. Different morphological analyses indicate that the growth temperature and the growth rate play a fundamental role in the stacking faults density. In details, X-ray diffraction and micro-Raman analysis show the strict relationship between growth temperature, crystal quality, and doping incorporation in the homo-epitaxial chemical vapor deposition CVD growth process of a 3C-SiC wafer. Furthermore, photoluminescence spectra show a considerable reduction of point defects during homo-epitaxy at high temperatures.
Publisher: 
Publication date: 
10 Oct 2019
Authors: 

Ruggero Anzalone, Massimo Zimbone, Cristiano Calabretta, Marco Mauceri, Alessandra Alberti, Riccardo Reitano, Francesco La Via

Biblio References: 
Volume: 12 Issue: 20
Origin: 
Materials (Basel, Switzerland)