Type:
Journal
Description:
In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high-power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.
Publisher:
IOP Publishing
Publication date:
1 Jun 2020
Biblio References:
Volume: 1561 Issue: 1 Pages: 012013
Origin:
Journal of Physics: Conference Series