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Type: 
Conference
Description: 
This paper presents the results of the electrical characterization of a silicon Low Voltage Trench Gate charged-coupled Power MOSFET under external uniaxial mechanical stress. The stress was imposed by a 3 Point Bending system during electrical measurement of the oxide leakage current.
Publisher: 
IEEE
Publication date: 
1 Sep 2020
Authors: 

Lorenzo Maurizio Selgi, Antonella Sciuto, Michele Calabretta, Alessandro Sitta, Giuseppe D'Arrigo

Biblio References: 
Volume: 1 Pages: 365-370
Origin: 
2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)