Correlation between the interfacial charge trapping and chemical properties of deposited SiO2 layers in 4H-SiC MOSFETs subjected to different nitridations

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Type:

Journal

Description:

Publisher:

Publication date:

1 Dec 2020

Authors:

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Santi Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Biblio References:

Pages: arXiv: 2012.08829

Origin:

arXiv e-prints

Link:

Scientific Productions