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Many attractive mechanical and electrical properties make silicon carbide (SiC) a material of interest in both electronic devices and sensors for nowadays technology (sustainable energies, hybrid vehicles, low power loss inverters). Silicon carbide exists in nature in several crystalline structures, called polytypes, differentiated by the stacking sequence of the tetrahedrially bonded Si-C bilayers. The only possible cubic structure, 3C-SiC, is obtained when the bilayer stacking is of the kind ABCABC..., resulting in a pure zinc-blende structure. 3C-SiC growth on Si is allowed within chemical vapour deposition (CVD) reactors, which would ensure a very high purity of the resulting product. The interface between 3C-SiC and Si is the origin of a high density of planar and volume defects, such as microtwins, anti-phase boundaries and stacking faults in the epilayer and voids in Si underneath the hetero-interface. Most of …
IOP Publishing
Publication date: 
23 Nov 2020
Biblio References: 
Issue: 24 Pages: 1762
ECS Meeting Abstracts