Highlights: Black-Right-Pointing-Pointer Dielectrics growth and characterization is one of the most hot topics of materials science and microelectronics. Black-Right-Pointing-Pointer CaCu{sub 3}Ti{sub 4}O{sub 12} perovskite, recently, demonstrated to possess peculiar dielectric properties (Science, 2001, 293, 673-676). Black-Right-Pointing-Pointer To date no deep discussion on the growth processes, properties and perspective of CCTO thin films has been proposed. Black-Right-Pointing-Pointer Our paper is an effective example of interdisciplinarity, since the comparison between PLD and MOCVD has been addressed. Black-Right-Pointing-Pointer Great attention has been paid to CaCu{sub 3}Ti{sub 4}O{sub 12} film/substrate interfaces since dielectric properties are strongly affected. - Abstract: Metal Organic Chemical Vapor Deposition (MOCVD) and Pulsed Laser Deposition (PLD) techniques have been used for the growth of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) thin films on La{sub 0.9}Sr{sub 1.1}NiO{sub 4}/LaAlO{sub 3} (LSNO/LAO) stack. (1 0 0) oriented CCTO films have been formed through both deposition routes and film complete structural and morphological characterizations have been carried out using several techniques (X-ray diffraction, scanning electron microscopy, energy-filtered transmission electron microscopy). The comparative study demonstrated some differences at the CCTO/LSNO interfaces depending on the adopted deposition technique. Chemical/structural modification of the LSNO electrode probably occurred as a function of the different oxygen partial pressure used in the PLD and MOCVD processes.