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Charge Trapping Mechanisms in Nitridated SiO2/4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry
Type:
Conference
Description:
Publisher:
Trans Tech Publications Ltd
Publication date:
1 Jan 2022
Authors:
Patrick Fiorenza, Corrado Bongiorno, A Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte
Biblio References:
Volume: 1062 Pages: 160-164
Origin:
Materials Science Forum
Link:
https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…
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