Charge Trapping Mechanisms in Nitridated SiO2/4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry | Catania HQ

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Charge Trapping Mechanisms in Nitridated SiO2/4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry

Type:

Conference

Description:

Publisher:

Trans Tech Publications Ltd

Publication date:

1 Jan 2022

Authors:

Patrick Fiorenza, Corrado Bongiorno, A Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Biblio References:

Volume: 1062 Pages: 160-164

Origin:

Materials Science Forum

Link:

https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…