Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor Page 1 Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors” [Appl. Phys. Lett. 99, 072117 (2011)] A. Frazzetto, F. Giannazzo, P. Fiorenza, V. Raineri, and F. Roccaforte Citation: Applied Physics Letters 99, 259901 (2011); doi: 10.1063/1.3665121 View online: http://dx.doi.org/10.1063/1.3665121 View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/99/25?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 112, 084501 (2012); 10.1063/1.4759354 Limiting mechanism of inversion channel mobility in Al-…