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Publisher’s Note:“Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors”[Appl. Phys. Lett. 99 …

Type: 
Journal
Description: 
Publisher: 
American Institute of Physics
Publication date: 
19 Dec 2011
Authors: 

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Biblio References: 
Volume: 99 Issue: 25 Pages: 072117
Origin: 
Applied Physics Letters
Link: 
https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…

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