The last May, STM announced a new high-volume 200mm silicon carbide (“SiC”) manufacturing facility for substrates, power devices and modules, as well as test and packaging, to be built in Catania. Nowadays the Campus is already producing 200mm SiC substrates including the CVD epitaxial layers. The substrate technology has been transferred from STM SiC AB in Norrkoping (Sweden) to Catania and in this presentation, we will exploit the manufacturing steps involved in the wafers production.