A multiplicity of chemical (structure, composition, point and extended defects, impurities, etc.) and physical (carrier concentration, mobility, lifetime, band gap, core level energies, etc.) parameters characterize the behavior of semiconductors; some of them are more relevant than others according to the considered semiconductor and its use. The experimental technique suitable to measure a given physical or chemical parameter depends primarily on the chosen semiconductor, on its use as a device, and on the size and application of the device itself. For example, advanced silicon CMOS and SiC power devices require different measuring techniques. As it would be impossible to cover in a single chapter even the most important adopted techniques, we present just the basics of the following techniques: transmission electron microscopy (TEM), X-ray analysis, Raman spectrometry, scanning probe and atomic force …