In the recent years, the possibility to use the internal body-diode of the 4H-SiC power MOSFET is rising the scientific community attention, due to the possibility to implement simplified topologies in the final application [1,2]. In this context, although 4H-SiC MOSFETs can satisfy the mission profile requirements even in the presence of crystalline defects (i.e. carrot-like or prismatic stacking fault), understanding how the device properties are impacted by these defects is mandatory to probe the robustness of the body-diode under operative conditions [3]. In fact, such crystalline defects have been investigated on epitaxial material and/or in p-i-n junctions [4]; to date there is not enough investigation on implanted materials or complex MOSFET structures. This point is a fundamental aspect deserving attention to comprehend the device behavior in the presence of carrot-like defects.