Silicon Carbide (SiC) represents a new challenge for detector manufacturing. The frontier activities of nuclear and subnuclear physics require devices with excellent performance in terms of stability and ability to operate at high fluxes of incident particles, e.g. in order to measure cross-sections of very rare phenomena. SiC is extremely appealing for its expected features in terms of radiation hardness; it is a wide band gap semiconductor and is presently the most intensively studied, as an alternative to silicon for the production of radiation hard devices. The irradiation is known to cause an appreciable deterioration of the detector performance. Generally, the main evidence of damage is a fluence proportional increase of the leakage current. Loss of energy resolution and of charge collection efficiency are also signs of increasing damage. The aim of this work is to study the effects of damage in SiC from the point of view …