This study addresses the poor crystal quality and wafer cracks experienced by 3C-SiC films grown on (111) Si substrates, which prevent access to bulk growth. By employing a novel Chemical Vapor Deposition (CVD) growth method on 4-inch Si substrates, it was possible to grow a layer of (111) 3C-SiC that was 230 μm thick, achieved by melting the Si substrate in the CVD chamber. The resulting free-standing 3C-SiC was then utilized to grow a bulk (111) 3C-SiC layer under high N fluxes. After molten KOH etching, the SEM examination demonstrated a considerable decrease in the density of stacking faults (SFs) with values of (7.16±0.04)×10 cm in heteroepitaxial step while SFs density shifts to (0.4±0.3)×10 cm when using a N 2 flux of 1600 sccm. The emission linked to point defects is, also, significantly reduced in (111) 3C-SiC with respect to (100) 3C-SiC growth. Scanning Transmission Electron …