In this work, the fabrication of a novel configuration for an ohmic contact on p-doped SiC substrate, employing laser treatment instead of the conventional oven treatment, is analyzed. Test patterns made by Ti rectangular contacts on p-SiC were fabricated. The overall structure is treated with an excimer laser, employing different energy densities and number of shots. In particular, the laser energy density ranges from to and the number of shots from 1 to 10. The analysis shows that the system begins to exhibit an ohmic behavior when exposed to laser energy densities of and above. Also, the number of shots influences the electrical behavior, with higher values leading to losing the linearity in the I-V curves. The best performance, characterized by the lowest resistivity value, is observed with an energy density value of and 1 laser shot applied. Under these conditions, the resistivity value is …