2010 | Page 6 | Catania HQ

Design and characterization of single photon avalanche diodes arrays

L Neri, S Tudisco, L Lanzanò, F Musumeci, S Privitera, A Scordino, G Condorelli, G Fallica, M Mazzillo, D Sanfilippo, G Valvo

2010-05-11

Biblio references: Volume: 617 Issue: 1-3 Pages: 432-433

Origin: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Simultaneous nickel silicidation and silicon crystallization induced by excimer laser annealing on plastic substrate

A Alberti, A La Magna, M Cuscunà, G Fortunato, V Privitera

2010-04-05

Biblio references: Volume: 96 Issue: 14 Pages: 142113

Origin: Applied Physics Letters

Investigation of graphene–SiC interface by nanoscale electrical characterization

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Emanuele Rimini

2010-04-01

Biblio references: Volume: 247 Issue: 4 Pages: 912-915

Origin: physica status solidi (b)

Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate

Sushant Sonde, Filippo Giannazzo, Vito Raineri, Emanuele Rimini

2010-04-01

Biblio references: Volume: 247 Issue: 4 Pages: 907-911

Origin: physica status solidi (b)

Optical, morphological and spectro- scopic characterization of graphene on SiO 2

F Giannazzo, S Sonde, V Raineri, G Patanè, G Compagnini, F Aliotta, R Ponterio, E Rimini

2010-04-01

Biblio references: Volume: 7 Issue: 3‐4 Pages: 1251-1255

Origin: physica status solidi c

Threshold voltage in short channel polycrystalline silicon thin film transistors: Influence of drain induced barrier lowering and floating body effects

A Valletta, P Gaucci, L Mariucci, A Pecora, M Cuscunà, L Maiolo, G Fortunato

2010-04-01

Biblio references: Volume: 107 Issue: 7 Pages: 074505

Origin: Journal of Applied Physics

Role of the growth parameters on the structural order of MWCNTs produced by arc discharge in liquid nitrogen

Salvatore Bagiante, Silvia Scalese, Viviana Scuderi, Luisa D'Urso, Elena Messina, Giuseppe Compagnini, Vittorio Privitera

2010-04-01

Biblio references: Volume: 247 Issue: 4 Pages: 884-887

Origin: physica status solidi (b)

Lack of universal conductance features in disordered graphene nanoribbons

Antonino La Magna, Ioannis Deretzis, Giuseppe Forte, Renato Pucci

2010-04-01

Biblio references: Volume: 7 Issue: 3‐4 Pages: 1246-1250

Origin: physica status solidi c

On the aging effects of 4H-SiC Schottky photodiodes under high intensity mercury lamp irradiation

Antonella Sciuto, Massimo Mazzillo, Vito Raineri, Giuseppe Catania, Giuseppe D'Arrigo, Fabrizio Roccaforte

2010-03-18

Biblio references: Volume: 22 Issue: 11 Pages: 775-777

Origin: IEEE Photonics Technology Letters

Heteroepitaxial growth and faceting of Ge nanowires on Si (111) by electron-beam evaporation

Emanuele Francesco Pecora, Alessia Irrera, Pietro Artoni, Simona Boninelli, Corrado Bongiorno, Corrado Spinella, Francesco Priolo

2010-03-15

Biblio references: Volume: 13 Issue: 5 Pages: K53

Origin: Electrochemical and Solid State Letters

Design and characterization of single photon avalanche diodes arrays

Simultaneous nickel silicidation and silicon crystallization induced by excimer laser annealing on plastic substrate

Investigation of graphene–SiC interface by nanoscale electrical characterization

Nanoscale capacitive behaviour of ion irradiated graphene on silicon oxide substrate

Optical, morphological and spectro- scopic characterization of graphene on SiO 2

Threshold voltage in short channel polycrystalline silicon thin film transistors: Influence of drain induced barrier lowering and floating body effects

Role of the growth parameters on the structural order of MWCNTs produced by arc discharge in liquid nitrogen

Lack of universal conductance features in disordered graphene nanoribbons

On the aging effects of 4H-SiC Schottky photodiodes under high intensity mercury lamp irradiation

Heteroepitaxial growth and faceting of Ge nanowires on Si (111) by electron-beam evaporation

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