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A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

N Piluso, M Camarda, F La Via

2014-10-28

Biblio references: Volume: 116 Issue: 16 Pages: 163506

Origin: Journal of Applied Physics

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

M Camarda, F La Via

2014-10-28

Biblio references: Volume: 116 Issue: 16

Origin: Journal of Applied Physics

Use of radio frequency power, silicon tetrafluoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys

S Gaiaschi, R Ruggeri, ME Gueunier-Farret, EV Johnson

2014-10-27

Biblio references: Volume: 47 Issue: 45 Pages: 455102

Origin: Journal of Physics D: Applied Physics

Elusive presence of chloride in mixed halide perovskite solar cells

Silvia Colella, Edoardo Mosconi, Giovanna Pellegrino, Alessandra Alberti, Valentino LP Guerra, Sofia Masi, Andrea Listorti, Aurora Rizzo, Guglielmo Guido Condorelli, Filippo De Angelis, Giuseppe Gigli

2014-10-16

Biblio references: Volume: 5 Issue: 20 Pages: 3532-3538

Origin: The journal of physical chemistry letters

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Patrick Fiorenza, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

2014-10-06

Biblio references: Volume: 105 Issue: 14 Pages: 142108

Origin: Applied Physics Letters

Highlights from the Pierre Auger Observatory

Antoine Letessier-Selvon, Pierre Auger Collaboration

2014-10-01

Biblio references: Volume: 44 Issue: 5 Pages: 560-570

Origin: Brazilian Journal of Physics

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Filippo Giannazzo, Marcin Krysko, Mike Leszczynski, Fabrizio Roccaforte

2014-09-30

Biblio references: Volume: 314 Pages: 546-551

Origin: Applied surface science

Exploring the surface chemical reactivity of single crystals of binary and ternary bismuth chalcogenides

A Politano, M Caputo, S Nappini, F Bondino, E Magnano, ZS Aliev, MB Babanly, A Goldoni, G Chiarello, EV Chulkov

2014-09-18

Biblio references: Volume: 118 Issue: 37 Pages: 21517-21522

Origin: The Journal of Physical Chemistry C

Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales

E Placidi, F Arciprete, V Latini, S Latini, Rita Magri, M Scuderi, G Nicotra, F Patella

2014-09-15

Biblio references: Volume: 105 Issue: 11 Pages: 111905

Origin: Applied Physics Letters

Room temperature evolution of gold nanodots deposited on silicon

C Garozzo, A Filetti, C Bongiorno, A La Magna, F Simone, RA Puglisi

2014-09-01

Biblio references: Volume: 47 Issue: 3 Pages: 185-193

Origin: Gold Bulletin

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

Use of radio frequency power, silicon tetrafluoride and methane as parameters to tune structural properties of hydrogenated microcrystalline silicon carbon alloys

Elusive presence of chloride in mixed halide perovskite solar cells

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Highlights from the Pierre Auger Observatory

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Exploring the surface chemical reactivity of single crystals of binary and ternary bismuth chalcogenides

Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales

Room temperature evolution of gold nanodots deposited on silicon

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