2020 | Page 10 | Catania HQ

Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition

Yuji Yamamoto, Oliver Skibitzki, Markus Andreas Schubert, Mario Scuderi, Felix Reichmann, Marvin H Zöllner, Monica De Seta, Giovanni Capellini, Bernd Tillack

2020-02-20

Biblio references: Volume: 59 Issue: SG Pages: SGGK10

Origin: Japanese Journal of Applied Physics

Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

Alberto Sciuto, Antonino La Magna, Giuseppe GN Angilella, Renato Pucci, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo, Ioannis Deretzis

2020-02-01

Biblio references: Volume: 14 Issue: 2 Pages: 1900399

Origin: physica status solidi (RRL)–Rapid Research Letters

Generality and specificity of the binding behaviour of lysozyme with pectin varying in local charge density and overall charge

Yurij A Antonov, Irina L Zhuravleva, Miete Celus, Clare Kyomugasho, Salvatore Lombardo, Wim Thielemans, Marc Hendrickx, Paula Moldenaers, Ruth Cardinaels

2020-02-01

Biblio references: Volume: 99 Pages: 105345

Origin: Food Hydrocolloids

Extensive Fermi level Engineering for Graphene Through the Interaction with Aluminum Nitrides and Oxides

Alberto Sciuto, Antonino La Magna, Giuseppe GN Angilella, Renato Pucci, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo, Ioannis Deretzis

2020-02-01

Biblio references: Volume: 14 Issue: 2 Pages: 1900399

Origin: physica status solidi (RRL)–Rapid Research Letters

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

2020-02-01

Biblio references: Volume: 6 Issue: 2 Pages: 1901171

Origin: Advanced Electronic Materials

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

2020-02-01

Biblio references: Volume: 6 Issue: 2 Pages: 1901171

Origin: Advanced Electronic Materials

Interaction of VSe2 with Ambient Gases: Stability and Chemical Reactivity

Raju Edla, Chia-Nung Kuo, Piero Torelli, Chin Shan Lue, Danil W Boukhvalov, Antonio Politano

2020-02-01

Biblio references: Volume: 14 Issue: 2 Pages: 1900332

Origin: physica status solidi (RRL)–Rapid Research Letters

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

2020-02-01

Biblio references: Volume: 14 Issue: 2 Pages: 1900393

Origin: physica status solidi (RRL)–Rapid Research Letters

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

2020-02-01

Biblio references: Volume: 14 Issue: 2 Pages: 1900393

Origin: physica status solidi (RRL)–Rapid Research Letters

Interaction of VSe2 with Ambient Gases: Stability and Chemical Reactivity

Raju Edla, Chia-Nung Kuo, Piero Torelli, Chin Shan Lue, Danil W Boukhvalov, Antonio Politano

2020-02-01

Biblio references: Volume: 14 Issue: 2 Pages: 1900332

Origin: physica status solidi (RRL)–Rapid Research Letters

Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition

Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

Generality and specificity of the binding behaviour of lysozyme with pectin varying in local charge density and overall charge

Extensive Fermi level Engineering for Graphene Through the Interaction with Aluminum Nitrides and Oxides

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Interaction of VSe2 with Ambient Gases: Stability and Chemical Reactivity

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

Interaction of VSe2 with Ambient Gases: Stability and Chemical Reactivity

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