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Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting

Tingting Han, Yuanyuan Shi, Xiaoxue Song, Antonio Mio, Luca Valenti, Fei Hui, Stefania Privitera, Salvatore Lombardo, Mario Lanza

2016-01-01

Biblio references: Volume: 4 Issue: 21 Pages: 8053-8060

Origin: Journal of Materials Chemistry A

Nanospheres based on PLGA/amphiphilic cyclodextrin assemblies as potential enhancers of Methylene Blue neuroprotective effect

Carmela Cannava, Rosanna Stancanelli, MR Marabeti, Valentina Venuti, C Cascio, P Guarneri, C Bongiorno, G Sortino, Domenico Majolino, Antonino Mazzaglia, Silvana Tommasini, Cinzia Anna Ventura

2016-01-01

Biblio references: Volume: 6 Issue: 20 Pages: 16720-16729

Origin: RSC advances

Modification of graphene oxide and graphene oxide-TiO2 solutions by pulsed laser irradiation for dye degradation

S Filice, D D’Angelo, G Compagnini, M Sinatra, E Fazio, R Reitano, V Privitera, S Scalese

2016-01-01

Biblio references: Volume: 42 Issue: 1 Pages: 50-53

Origin: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Dual emission in asymmetric “giant” PbS/CdS/CdS core/shell/shell quantum dots

Haiguang Zhao, Gianluca Sirigu, Andrea Parisini, Andrea Camellini, Giuseppe Nicotra, Federico Rosei, Vittorio Morandi, Margherita Zavelani-Rossi, Alberto Vomiero

2016-01-01

Biblio references: Volume: 8 Issue: 7 Pages: 4217-4226

Origin: Nanoscale

Complex wet-environments in electronic-structure calculations

Giuseppe Fisicaro, Luigi Genovese, Oliviero Andreussi, Nicola Marzari, Stefan Goedecker

2016-01-01

Biblio references: Volume: 2016 Pages: F53. 007

Origin: APS

Morphology-controlled synthesis of NiO films: the role of the precursor and the effect of the substrate nature on the films' structural/optical properties

Sergio Battiato, Maria M Giangregorio, Maria R Catalano, Raffaella Lo Nigro, Maria Losurdo, Graziella Malandrino

2016-01-01

Biblio references: Volume: 6 Issue: 37 Pages: 30813-30823

Origin: RSC advances

Contact Effects in Organic Thin-Film Transistors: Device Physics and Modeling

Luigi Mariucci, Matteo Rapisarda, Antonio Valletta, Guglielmo Fortunato

2016-01-01

Biblio references: Pages: 945-969

Origin: Handbook of Visual Display Technology

Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals

Massimo Mastromatteo, Davide De Salvador, Enrico Napolitani, Elisa Arduca, Gabriele Seguini, Jacopo Frascaroli, Michele Perego, Giuseppe Nicotra, Corrado Spinella, Cristina Lenardi, Alberto Carnera

2016-01-01

Biblio references: Volume: 4 Issue: 16 Pages: 3531-3539

Origin: Journal of Materials Chemistry C

The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

A Politano, G Chiarello, R Samnakay, G Liu, Bekir Gürbulak, S Duman, AA Balandin, DW Boukhvalov

2016-01-01

Biblio references: Volume: 8 Issue: 16 Pages: 8474-8479

Origin: Nanoscale

The role of defective regions near the contacts on the electrical characteristics of Bottom-Gate Bottom-Contact organic TFTs

Matteo Rapisarda, Sabrina Calvi, Antonio Valletta, Luigi Fortunato, Guglielmo and Mariucci

2016-01-01

Biblio references: Volume: 12 Issue: 3 Pages: 252-256

Origin: JOURNAL OF DISPLAY TECHNOLOGY

Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting

Nanospheres based on PLGA/amphiphilic cyclodextrin assemblies as potential enhancers of Methylene Blue neuroprotective effect

Modification of graphene oxide and graphene oxide-TiO2 solutions by pulsed laser irradiation for dye degradation

Dual emission in asymmetric “giant” PbS/CdS/CdS core/shell/shell quantum dots

Complex wet-environments in electronic-structure calculations

Morphology-controlled synthesis of NiO films: the role of the precursor and the effect of the substrate nature on the films' structural/optical properties

Contact Effects in Organic Thin-Film Transistors: Device Physics and Modeling

Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals

The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

The role of defective regions near the contacts on the electrical characteristics of Bottom-Gate Bottom-Contact organic TFTs

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