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Strengths and limitations of the vacancy engineering approach for the control of dopant diffusion and activation in silicon

Alain Claverie, Fuccio Cristiano, Mathieu Gavelle, Fabrice Sévérac, Frédéric Cayrel, Daniel Alquier, Wilfried Lerch, Silke Paul, Leonard Rubin, Vito Raineri, Filippo Giannazzo, Hervé Jaouen, Ardechir Pakfar, Aomar Halimaoui, Claude Armand, Nikolay Cherkashim, Olivier Marcelot

2008-01-01

Biblio references: Volume: 1070

Origin: MRS Online Proceedings Library Archive

Formation of nanoparticles under laser ablation of solids in liquids

GA Shafeev

2008-01-01

Biblio references: Pages: 1-37

Origin: Nanoparticles: New Research

Electronic properties of (3/2× 3/2)-Na/Cu (1 1 1)

A Politano, RG Agostino, E Colavita, V Formoso, G Chiarello

2008-01-01

Biblio references: Volume: 162 Issue: 1 Pages: 25-29

Origin: Journal of Electron Spectroscopy and Related Phenomena

Electrical properties of self-assembled nano-Schottky diodes

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

2008-01-01

Biblio references: Volume: 2008

Origin: Journal of Nanomaterials

Realization of hybrid silicon core/silicon nitride shell nanodots by LPCVD for NVM application

Jean Philippe Colonna, Gabriel Molas, Marc W Gely, Marc Bocquet, Eric Jalaguier, Barbara De Slavo, Helen Grampeix, Pierre Brianceau, Karim Yckache, Anne-Marie Papon, Geoffroy Auvert, Corrado Bongiorno, Salvatore Lombardo

2008-01-01

Biblio references: Volume: 1071

Origin: MRS Online Proceedings Library Archive

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals&58; Gold on/in SiO&60; sub&62; 2&60;/sub&62

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

2008-01-01

Biblio references: Volume: 3 Issue: 11 Pages: 454-460

Origin: Nanoscale Research Letters

Drain induced barrier lowering and impact ionization effects in short channel polysilicon TFTs

G Fortunato, A Valletta, P Gaucci, L Mariucci, M Cuscunà, L Maiolo, A Pecora

2008-01-01

Biblio references: Pages: 907-910

Origin: 한국정보디스플레이학회: 학술대회논문집

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

2008-01-01

Biblio references: Volume: 768 Issue: 600 Pages: 603

Origin: Materials Science Forum

La transizione menopausale può scatenare la depressione?

Veronica L Harsh, David R Rubinow, Peter J Schmidt

2008-01-01

Biblio references: Volume: 30 Issue: 10 Pages: 289-294

Origin: Giornale italiano di ostetricia e ginecologia

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Valeria Puglisi, Vito Raineri

2008-01-01

Biblio references: Volume: 768 Issue: 600 Pages: 1341

Origin: Materials Science Forum

Strengths and limitations of the vacancy engineering approach for the control of dopant diffusion and activation in silicon

Formation of nanoparticles under laser ablation of solids in liquids

Electronic properties of (3/2× 3/2)-Na/Cu (1 1 1)

Electrical properties of self-assembled nano-Schottky diodes

Realization of hybrid silicon core/silicon nitride shell nanodots by LPCVD for NVM application

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals&58; Gold on/in SiO&60; sub&62; 2&60;/sub&62

Drain induced barrier lowering and impact ionization effects in short channel polysilicon TFTs

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

La transizione menopausale può scatenare la depressione?

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

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