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Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, Gaetano Foti

2006-01-01

Biblio references: Volume: 911

Origin: MRS Online Proceedings Library Archive

Analysis of transport properties of SLS polysilicon TFTs

G Fortunato, A Bonfiglietti, A Valletta, L Mariucci, M Rapisarda, SD Brotherton

2006-01-01

Biblio references: Pages: 513-518

Origin: 한국정보디스플레이학회: 학술대회논문집

Hot-carrier-induced degradation of LDD polysilicon TFTs

A Valletta, L Mariucci, G Fortunato

2005-12-19

Biblio references: Volume: 53 Issue: 1 Pages: 43-50

Origin: IEEE transactions on electron devices

Hot-carrier-induced degradation of LDD polysilicon TFTs

A Valletta, L Mariucci, G Fortunato

2005-12-19

Biblio references: Volume: 53 Issue: 1 Pages: 43-50

Origin: IEEE Transactions on Electron Devices

Submicron confinement effect on electrical activation of B implanted in Si

E Bruno, S Mirabella, G Impellizzeri, F Priolo, F Giannazzo, V Raineri, E Napolitani

2005-12-05

Biblio references: Volume: 124 Pages: 257-260

Origin: Materials Science and Engineering: B

Boron interaction with extended defects induced by He–H co-implantation in Si

G Gaudin, F Cayrel, C Bongiorno, R Jerisian, C Dubois, V Raineri, D Alquier

2005-12-05

Biblio references: Volume: 124 Pages: 266-270

Origin: Materials Science and Engineering: B

Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology

F Giannazzo, V Raineri, S Mirabella, E Bruno, G Impellizzeri, F Priolo

2005-12-05

Biblio references: Volume: 124 Pages: 54-61

Origin: Materials Science and Engineering: B

Breakdown kinetics of Pr 2 O 3 films by conductive-atomic force microscopy

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Salvatore Lombardo, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà

2005-12-05

Biblio references: Volume: 87 Issue: 23 Pages: 231913

Origin: Applied Physics Letters

Boron distribution in silicon after excimer laser annealing with multiple pulses

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, M Italia, V Privitera, G Fortunato, M Cuscuna, L Mariucci

2005-12-05

Biblio references: Volume: 124 Pages: 228-231

Origin: Materials Science and Engineering: B

Excimer laser annealing of B and BF 2 implanted Si

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, M Italia, V Privitera, G Fortunato, M Cuscuna, L Mariucci

2005-12-05

Biblio references: Volume: 124 Pages: 232-234

Origin: Materials Science and Engineering: B

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

Analysis of transport properties of SLS polysilicon TFTs

Hot-carrier-induced degradation of LDD polysilicon TFTs

Hot-carrier-induced degradation of LDD polysilicon TFTs

Submicron confinement effect on electrical activation of B implanted in Si

Boron interaction with extended defects induced by He–H co-implantation in Si

Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology

Breakdown kinetics of Pr 2 O 3 films by conductive-atomic force microscopy

Boron distribution in silicon after excimer laser annealing with multiple pulses

Excimer laser annealing of B and BF 2 implanted Si

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