Until now, the realization of 2D InN remained elusive. In this work, the formation of 2D InN and measurements of its bandgap are reported. Bilayer InN is formed between graphene and SiC by an intercalation pro- cess in metal–organic chemical vapor deposition (MOCVD). The thickness uniformity of the intercalated structure is investigated by conductive atomic force microscopy (C-AFM). The structural and chemical properties of both light beam sentitive, and heavy elements are revealed as never before by atomic resolution scanning transmission electron microscopy (S/TEM) at our institute. The study has been published on Advanced Materials in the framework of EleGaNTe, ESTEEM3, GHOST II, and GRIFONE projects, and comes from a long-lasting collaboration between our institute, the Ungarian Centre for Energy Research and the Department of Physics Chemistry and Biology (IFM) at Linköping University. The paper is an open access and may be downloaded here: https://onlinelibrary.wiley.com/doi/10.1002/adma.202006660.