A Special Issue, entitled “Wide band gap semiconductors technology for next generation of energy efficient power electronics”, has been published in vol. 78 of Materials Science in Semiconductor Processing. (Guest Editors: Fabrizio Roccaforte (CNR-IMM, Italy) and Philippe Godignon (CNM-CSIC, Spain)).
The Special Issue is a collection of twelve invited review papers and five regular papers, providing a representative overview of the current progress in WBG semiconductor technology for power electronics. The main focus is put on the most mature SiC and GaN technologies, but highlights on other emerging WBG materials are also included.
Table of Contents
Editorial
Page 1
Fabrizio Roccaforte, Philippe Godignon
Recent advances in 4H-SiC epitaxy for high-voltage power devices
Review article
Pages 2-12
Hidekazu Tsuchida, Isaho Kamata, Tetsuya Miyazawa, Masahiko Ito, Xuan Zhang, Masahiro Nagano
Defects related to electrical doping of 4H-SiC by ion implantation
Review article
Pages 13-21
Roberta Nipoti, Hussein M. Ayedh, Bengt Gunnar Svensson
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
Review article
Pages 22-31
Maria Cabello, Victor Soler, Gemma Rius, Josep Montserrat, José Rebollo, Philippe Godignon
SiC MOSFET threshold-stability issues
Review article
Pages 32-37
Aivars J. Lelis, Ronald Green, Daniel B. Habersat
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Original research article
Pages 38-42
P. Fiorenza, M. Vivona, F. Iucolano, A. Severino, S. Lorenti, G. Nicotra, C. Bongiorno, F. Giannazzo, F. Roccaforte
Current status and perspectives of ultrahigh-voltage SiC power devices
Review article
Pages 43-56
T. Kimoto, Y. Yonezawa
From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
Open access - Review article
Pages 57-68
F. La Via, A. Severino, R. Anzalone, C. Bongiorno, G. Litrico, M. Mauceri, M.Schoeler, P.Schuh, P. Wellmann
Development, characterisation and simulation of wafer bonded Si-on-SiC substrates
Open access - Original research article
Pages 69-74
P.M. Gammon, C.W. Chan, F. Li, F. Gity, T. Trajkovic, V. Pathirana, D. Flandre, V. Kilchytska
Materials and processing issues in vertical GaN power electronics
Review article
Pages 75-84
Jie Hu, Yuhao Zhang, Min Sun, Daniel Piedra, Nadim Chowdhury, Tomás Palacios
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Open access - Review article
Pages 85-95
Tamotsu Hashizume, Kenya Nishiguchi, Shota Kaneki, Jan Kuzmik, Zenji Yatabe
Review of technology for normally-off HEMTs with p-GaN gate
Review article
Pages 96-106
Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte
A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy
Original research article
Pages 107-110
Georgio El-zammar, Arnaud Yvon, Wahid Khalfaoui, Maher Nafouti, Frederic Cayrel, Emmanuel Collard, Daniel Alquier
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Original research article
Pages 111-117
M. Spera, C. Miccoli, R. Lo Nigro, C. Bongiorno, D. Corso, S. Di Franco, F. Iucolano, F. Roccaforte, G. Greco
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs
Open access - Review article
Pages 118-126
Matteo Meneghini, Alaleh Tajalli, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation
Original research article
Pages 127-131
Alessandro Chini, Ferdinando Iucolano
Recent progress in the growth of β-Ga2O3 for power electronics applications
Review article
Pages 132-146
Michele Baldini, Zbigniew Galazka, Günter Wagner
Recent advances in diamond power semiconductor devices
Review article
Pages 147-156
Hitoshi Umezawa