The integration of two-dimensional materials (2DM), such as graphene and transition metal dichalcogenides (MoS2, WS2, MoSe2, WSe2,…) with bulk semiconductors is currently the object of intensive investigations, as it allows to combine the unique functional properties of 2DM with the well-assessed electronic quality of the 3D substrates. To date, many efforts have been dedicated to integrate 2D materials with the mainstream silicon CMOS platform.
On the other hand, the wide bandgap (WBG) semiconductors, such as 4H-SiC and GaN, are currently experiencing a huge development, driven by their strategic role in automotive, energy efficient power conversion, and optoelectronics. Due to their hexagonal structure, 4H-SiC and GaN naturally support the epitaxial growth of graphene and MoS2. Hence, the integration of these 2DM with WBG semiconductors can open new application perspectives in this expanding field.
This talk will present an overview of the activities on 2DM at IMM in Catania, especially focusing on running projects on graphene and MoS2 integration with SiC, GaN and AlGaN/GaN heterostructures. Examples of novel devices targeted to ultra-high frequency and energy efficient applications will be illustrated, and future perspectives will be discussed.