The seminar will focus on a novel annealing technique for 4H-SiC implants which involves the adoption of pulsed excimer XeCl laser. In particular, an absorbing graphitic coating is used to protect the sample from surface atoms desorption and SiC phase separation. Both conventional furnace annealing and laser annealing on P and Al implants, commonly employed for source and body regions in metal-oxide-semiconductor field-effect transistors (MOSFETs), were examined through Transmission Electron Microscopy (TEM), m-Raman spectroscopy and sheet resistance measurements. It will be shown that the implant activated through traditional thermal annealing at 1650 °C for 30 min is affected by a large network of defects. Conversely, spectroscopic and electrical investigations confirmed both the crystalline quality of the laser annealed sample and the remarkable activation of the implanted P dopant fraction.