Silicon Carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photon detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments where the temperature and the radiation environment preclude the use of conventional microelectronic semiconductors [1-2]. In this talk will be presented a part of the activity performed in the last years at CNR-IMM in collaboration with INFN and ENI for the development of new SiC detectors.

[1] A. Owens and A. Peacock, Nucl. Instrum. Methods A, 531, 18 (2004).

[2]   E. V. Kalinina et al., Phys lett., 34, 210 (2008).