Dielectric breakdown of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported.
The Electrochemical Society
22 Aug 2008
Volume: 14 Issue: 1 Pages: 303-309