Type:
Journal
Description:
Dielectric breakdown of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported.
Publisher:
IOP Publishing
Publication date:
22 Aug 2008
Biblio References:
Volume: 14 Issue: 1 Pages: 303
Origin:
ECS Transactions