A Special Issue, entitled “New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing”, has been recently published on Materials Science in Semiconductor Processing. Guest Editors: Dr. Giuseppe Greco (CNR-IMM, Italy) Prof. Anelia Kakanakova (Linkoping University, Sweden), Dr. Piotr Kruszewski (Unipress, Poland), Dr. Bela Pécz (HAS-MTA, Hungary), with the supervision of Dr. Giuliana Impellizzeri (CNR-IMM, Italy)

The Special Issue is a collection of twenty-seven regular papers and three invited papers, which examine the most critical issues related to material quality, processing and device technologies in WBG semiconductors. Wide bandgap (WBG) semiconductors (such as SiC and GaN) are currently materials of choice for high power and high frequency electronics. Furthermore, alternative WBG materials (including Ga₂O₃, ZnO, and diamond) and heterostructures (including 2D/3D) are gaining more and more interest for advanced applications. This Special Issue is aimed to discuss current status of WBG technology and new frontiers in this research field.

The papers are selected contributions presented at the Symposium R of the EMRS Fall meeting 2018.

 

Table of Contents

Editorial

Volume 102, Pages 104581

G. Greco, A. Kakanakova, P. Kruszewski, B. Pécz

 

GaN-on-Si HEMTs for wireless base stations

Review article

Volume 98, Pages 100-105

F. Iucolano, T. Boles

 

Experimental and numerical analysis of V_TH and R_ON drifts in E-mode GaN HEMTs during switch-mode operation

Research article

Volume 98, Pages 77-80

A. Chini, F. Iucolano

 

Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTs

Research article

Volume 96, Pages 153-160

M. Guziewicz, A. Taube, M. Ekielski, K. Golaszewska, J. Zdunek, P. Bazarnik, B. Adamczyk-Cieslak, A. Szerling

 

Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature

Research article

Volume 93, Pages 280-283

I. Grigelionis, J. Jorudas, V. Jakštas, V. Janonis, I. Kašalynas P. Prystawko P. Kruszewski, M. Leszczyński

 

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Research article

Volume 97, Pages 35-39

E.Schilirò, F. Giannazzo, C. Bongiorno, S. Di Franco, G. Greco, F. Roccaforte, P. Prystawko, P. Kruszewski, M. Leszczyński, M. Krysko, A. Michon, Y. Cordier, I. Cora, B. Pecz, H. Gargouri, R. Lo Nigro

 

Study of spectral and recombination characteristics of HVPE GaN grown on ammono substrates

Research article

Volume 91, Pages 341-355

E. Gaubas, P. Baronas, T. Čeponis, L. Deveikis, D.Dobrovolskas, E.Kuokstis, J.Mickevičius, V.Rumbauskas, M.Bockowski, M.Iwinska, T. Sochacki

 

Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate

Research article

Volume 96, Pages 132-136

P. Kruszewski, P. Prystawko, M. Grabowski, T. Sochacki, A. Sidor, M. Bockowski, J. Jasinski, L. Lukasiak, R. Kisiel, M. Leszczynski

 

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Research article

Volume 94, Pages 164-170

F. Roccaforte, F. Giannazzo, A. Alberti, M. Spera, M. Cannas, I. Cora, B. Pécz, F. Iucolano, G. Greco

 

Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics

Research article

Volume 91, Pages 146-150

E. BahatTreidel, O. Hilt, M. Wolf, L. Schellhase, A. Thies, J. Würfl

 

Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor

Research article

Volume 93, Pages 153-157

P. Prystawko, F. Giannazzo, M. Krysko, J. Smalc-Koziorowska , E. Schilirò, G. Greco, F. Roccaforte, M. Leszczynski

 

Measuring strain caused by ion implantation in GaN

Research article

Volume 98, Pages 95-99

P. Mendes, K. Lorenz, E. Alves, S. Schwaiger, F. Sholz, S. Magalhães

 

Nanostructured GaN sensors for Surface Enhanced Raman Spectroscopy

Research article

Volume 91, Pages 97-101

B. Bartosewicz, P.O. Andersson, I. Dzięcielewski, B. Jankiewicz, J.L. Weyher

 

Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Review article

Volume 94, Pages 116-127

D. Planson, B. Asllani, L.V. Phung, P.l Bevilacqua, H. Hamad, C. Raynaud

 

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

Research article

Volume 91, Pages 387-391

G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, M. Hajdel, J. Smalc-Koziorowska, A. Feduniewicz-Żmud, E. Grzanka, P. Wolny, H. Turski, P. Wiśniewski, P. Perlin, C. Skierbiszewski

 

Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Research article

Volume 93, Pages 274-279

M. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte

 

Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing

Research article

Volume 94, Pages 64-69

G. Pristavu, G. Brezeanu, R. Pascu, F. Drăghici, M. Bădilă

 

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Research article

Volume 97, Pages 62-66

S. Rascunà, P. Badalà, C. Tringali, C. Bongiorno, E. Smecca, A. Alberti, S. Di Franco, F. Giannazzo, G. Greco, F. Roccaforte, M. Saggio

 

Study of oxide trapping in SiC MOSFETs by means of TCAD simulations

Research article

Volume 97, Pages 40-43

C. Miccoli, F. Iucolano

 

Properties of Al₂O₃ thin films deposited on 4H-SiC by reactive ion sputtering

Research article

Volume 93, Pages 290-294

P. Fiorenza, M. Vivona, S. Di Franco, E. Smecca, S. Sanzaro, A. Alberti, M. Saggio, F. Roccaforte

 

Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Research article

Volume 98, Pages 55-58

R.Y. Khosa, J.T. Chen, M. Winters, K. Pálsson, R. Karhu, J. Hassan, N. Rorsman, E.Ö. Sveinbjӧrnsson

 

Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs

Research article

Volume 93, Pages   357-359

M. Cabello, V. Soler, L. Knoll, J. Montserrat, J. Rebollo, A. Mihaila, P. Godignon

 

Wavelength-selective 4H-SiC UV-sensor array

Research article

Volume 93, Pages   205-211

C.D. Matthus, A.J. Bauer, L. Frey, T. Erlbacher

 

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Research article

Volume 93, Pages   295-298

M. Spera, G. Greco, R. Lo Nigro, C. Bongiorno, F. Giannazzo, M. Zielinski, F. La Via, F. Roccaforte

 

Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC

Research article

Volume 96, Pages 145-152

I. Shtepliuk, I. G. Ivanov, T. Iakimov, R. Yakimova, A. Kakanakova-Georgieva, P. Fiorenza, F. Giannazzo

 

Challenges of low-temperature synthesized ZnO nanostructures and their integration into nano-systems

Review article

Volume 91, Pages 404-408

G. Poulin-Vittrant, A. S. Dahiya, S. Boubenia, K. Nadaud, F. Morini, C. Justeau, D. Alquier

 

Structural study of MgO and Mg-doped ZnO thin films grown by atomic layer deposition

Research article

Volume 93, Pages 6-11

I. Cora, Z. Baji, Z. Fogarassy, Z. Szabó, B. Pécz

 

Photoluminescence, conductivity and structural study of terbium doped ZnO films grown on different substrates

Research article

Volume 94, Pages 51-56

N. Korsunska, L. Borkovska, Y. Polischuk, O. Kolomys, P. Lytvyn, I. Markevich, V. Strelchuk, V. Kladko, O. Melnichuk, L. Melnichuk, L. Khomenkova, C. Guillaume, X. Portier

 

Valence band of ZnO:Yb probed by resonant photoemission spectroscopy

Research article

Volume 91, Pages 306-309

N. Demchenko, R. Ratajczak, Y. Melikhovd, P. Konstantynov, E. Guziewicz

 

Synthesis and structural characterization of microcrystalline Ga₂S₃ layers on a GaP semiconductor substrate

Research article

Volume 94, Pages 80-85

C .Jastrzebski, D. J.Jastrzebski, V. Kozak, K. Pietak, M. Wierzbicki, W. Gebicki

 

Nitrogen doped spongy TiO₂ layers for sensors application

Research article

Volume 98, Pages 44-48

E. Smecca, S. Sanzaro, D. Grosso, T. Bottein, G. Mannino, G. G. Condorelli, A. La Magna, A. Alberti