E-MRS 2018 Fall Meeting - Symposium R New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing

The E-MRS 2018 Fall Meeting will be held at the Main Campus of the Warsaw University of Technology - Plac Politechniki 1- Warsaw, Poland, on 17-20 September 2018.

The conference will include 22 parallel symposia and one plenary session.

CNR-IMM will be co-organizer of the Symposium R entitled “New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing”.

The symposium will be will serve as a forum for experts from academia and industry to discuss the new frontiers and applications of wide bandgap materials.

Besides the consolidated SiC and GaN technologies, the symposium will focus also on future WBG materials (e.g., Ga₂O₃, ZnO, diamond), nanostructures (e.g., nanowires and nanorods) and novel 2D/3D heterojunctions formed by the integration of graphene or other 2D materials with WBG semiconductors.

The deadline for abstract submission is May 21^st, 2018. To submit your abstract, click here.

The symposium proceedings will be published on Materials Science in Semiconductors Processing.

Hot topics to be covered by the symposium:

SiC homo- and hetero-epitaxy
SiC device physics (MOS interfaces, contacts, doping by ion implantation, reliability...)
III-N homo- and hetero-epitaxy (nucleation layer, interface control,...)
Bulk GaN growth and device processing
GaN based HEMTs technology (contacts, dielectrics, approaches to normally off transistors, ...)
High voltage Schottky diodes on GaN
III-Nitrides for optoelectronics, photovoltaics and power electronics
ZnO for electronics and sensing
Ga₂O₃ growth and devices processing
Thermal management in GaN and oxide devices
Integration of 2D materials (graphene, TMDs) with group III-Nitrides or SiC
Wide-bandgap materials for sensors, MEMS and NEMS
Advanced characterizations (AFM, TEM, optical, electrical,…) of Wide-bandgap materials and heterostructures