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The project NetFISiC (Training NETwork on Functional Interfaces for SiC) was a Marie-Curie Initial Training Network. The main scientific objective of NetFISiC was to provide Silicon Carbide material (of various polytypes) with improved and adequate functional interfaces for getting a step forward in electronic devices performance. Research efforts will be dedicated to solve the problems faced by important devices like MOSFETs and Schottky diodes. Fundamental research have been performed both on the growth aspect and on innovating devices.

The consortium was formed by the following partners:

  • Université Claude Bernard Lyon 1 (France)
  • Linköpings Universitet (Sweden)
  • Institut Polytechnique de Grenoble (France)
  • Novasic SA (France)
  • Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany)
  • Aristotelio Panepistimio Thessalonikis (Greece)
  • Centre National de la Recherche Scientifique (France)
  • Vilniaus Universitetas (Lithuania)
  • Agencia Estatal Consejo Superior de Investigaciones Cientificas (Spain)
  • Acreo AB (Sweden)
  • CNR-IMM, Catania (Italy)
  • Infineon Technologies (Germany)

As a Marie Curie action, the target of NetFISiC partners was to train the next generation of researchers on various semiconductor related fields For this purpose, 13 early stage researchers (ESR) and 2 experienced researchers (ER) have been recruited and trained within this network, on multi-disciplinary subjects like material growth, characterization and devices fabrication, with a particular focus on SiC.

Project Coordinator:

Dr. Gabriel Ferro (Université Claude Bernard Lyon 1, France)

Coordinator for CNR-IMM:

Fabrizio Roccaforte

Date: 
2011-02-01 to 2015-01-31