The three years European project GaN4AP (GaN for Advanced Power Applications), funded in the framework of the EU call H2020-ECSEL-2020-1-IA-two-stage, started on June 1st, 2021.
GaN4AP links private companies, universities and public research centers working in the field of gallium nitride materials, devices and applications, in a Consortium composed by 36 partners from 6 different European countries.
The project aims at making GaN-based electronics one of the main technologies for active devices in all power conversion systems. A pervasive use of GaN electronics will allow the possibility of developing close-to-zero energy loss power electronic systems.
Four different innovation fields will be covered within the project:
(i) Power conversion systems based on state-of-the-art GaN-based HEMTs;
(ii) Novel AlScN materials for highly-current and high-power HEMTs;
(iii) New generation of vertical power devices based on bulk GaN;
(iv) Intelligent and integrated GaN solutions for E-Mobility power converters.
Within the project, CNR-IMM will be mainly involved in the advanced processing and characterization of bulk GaN materials and devices, contributing also in the study of novel AlScN/GaN heterostructures and reliability aspects of p-GaN gate HEMTs.
The development of new device technologies and innovative power circuits, employing the GaN-based devices will be a crucial factor for improving the competitiveness of European industries.
The project will be supported with the synergy of ECSEL JU and Italian Ministry of Economic Development.