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Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Type: 
Journal
Description: 
Publisher: 
AIP Publishing LLC
Publication date: 
28 Dec 2022
Authors: 

P Fiorenza, L Maiolo, G Fortunato, M Zielinski, F La Via, F Giannazzo, F Roccaforte

Biblio References: 
Volume: 132 Issue: 24 Pages: 245701
Origin: 
Journal of Applied Physics
Link: 
https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…

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