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Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
Type:
Journal
Description:
Publisher:
AIP Publishing LLC
Publication date:
28 Dec 2022
Authors:
P Fiorenza, L Maiolo, G Fortunato, M Zielinski, F La Via, F Giannazzo, F Roccaforte
Biblio References:
Volume: 132 Issue: 24 Pages: 245701
Origin:
Journal of Applied Physics
Link:
https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…
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