Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing | Catania HQ

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Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Type:

Journal

Description:

Publisher:

AIP Publishing LLC

Publication date:

28 Dec 2022

Authors:

P Fiorenza, L Maiolo, G Fortunato, M Zielinski, F La Via, F Giannazzo, F Roccaforte

Biblio References:

Volume: 132 Issue: 24 Pages: 245701

Origin:

Journal of Applied Physics

Link:

https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…